| PART |
Description |
Maker |
| K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4R271669B-NCK7 K4R271669B-MCK7 K4R271669B-MCK8 K4 |
256K x 16/18 bit x 32s banks Direct RDRAMTM 256 × 16/18位32秒银行直接RDRAMTM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| VDRH14V485BKE VDRH14V485AME VDRH10G040BKE VDRH14V3 |
Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 640 V, 233 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
VDR Metal Oxide Varistors High Surge
Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 420 V, 190 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 100 V, 22 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 350 V, 155 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 615 V, 230 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 385 V, 175 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 250 V, 26 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 825 V, 283 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 14 V, 1.5 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 18 V, 1.7 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 18 V, 6.3 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 14 V, 0.7 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 18 V, 3.2 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 26 V, 24 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 14 V, 2.6 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 640 V, 116 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
|
Vishay BCcomponents
Vishay Siliconix
|
| IDT70V7519S IDT70V7519S166DR IDT70V7519S200BF |
HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V56K × 36 SYNCHRONOU开户银行可切换双端口静态RAM.5V的接
|
Integrated Device Technology, Inc.
|
| 70V7519S133BF 70V7519S133BC 70V7519S133BCI 70V7519 |
HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
Integrated Device Technology
|
| HYS72D32500GR-8-A HYS72D64500GR-8-A HYS72D64500GR- |
256MB (32Mx72) PC1600 1-bank
512MB (64Mx72) PC1600 1-bank
512MB (64Mx72) PC2100 1-bank
1GB (128Mx72) PC1600 2-bank
1GB (128Mx72) PC2100 2-bank GB的（128Mx72）PC2100 2银行
32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
Infineon Technologies AG
|
| ASP-122953-01 |
BANK 1 IS DIFFERENTIAL PAIR, BANK 2 & 3 ARE SINGLE ENDED.
|
Samtec, Inc
|
| IDT70V7319S IDT70V7319S200DDI IDT70V7319S133BC IDT |
HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM
|
IDT[Integrated Device Technology]
|
| PTCSSLVT151DBE PTCSSLVT101DBE |
Temperature Dependent Resistor, RESISTOR, TEMPERATURE DEPENDENT, PTC, 1330 ohm, CHASSIS MOUNT, RADIAL LEADED, ROHS COMPLIANT
|
Vishay BCcomponents
|
| MR18R326GAG0-CT9 MR18R326GAG0-CM8 MR18R326GAG0 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V 2Mx186个RIMM的模块基76Mb阿芯片，32秒银行，32K/32ms参考，.5V
(32Mx18) 16pcs RIMM Module based on 576Mb A-die 32s banks32K/32ms Ref 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| PTCSGM3T151DBE |
Temperature Dependent Resistor, RESISTOR, TEMPERATURE DEPENDENT, PTC, 100 ohm, CHASSIS MOUNT, ROHS COMPLIANT
|
Vishay BCcomponents
|
| GS880E32AT-250 |
512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
|
